elektronische bauelemente 2N7002KG 190 ma, 60 v, r ds(on) = 2 n-ch small signal mosfet with gate protection 01-december-2008 rev. b page 1 of 5 k7k top view a l c b d g h j f k e 1 2 3 1 2 3 so t -23 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features z 2 kv esd protection z lower on-resistance : 2 z low threshold: 2 v (typ.) z low input capacitance: 25 pf z fast switching performance: 25 ns z low input and output leakage applications z direct logic-level interface: ttl/cmos z drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. z battery operated systems z solid-state relays package information weight: 0.07800g (approximately) marking code absolute maximum ratings ratings parameter symbol n-ch unit test conditions drain-source voltage v ds 60 gate-source voltage v gs 20 v continuous drain current 2 300 @t a =25 c continuous drain current 2 i d 190 @t a =100 c pulsed drain current 1 i dm 800 ma 0.35 @t a =25 c power dissipation 2 p d 0.14 w @t a =100 c thermal resistance junction-ambient max. r ja 350 c/w operating junction and storage temperature t j , t stg -55 ~ +150 c notes: 1. pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board. millimete r millimete r ref. min. max. ref. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50 1 gate 2 source drain 3
elektronische bauelemente 2N7002KG 190 ma, 60 v, r ds(on) = 2 n-ch small signal mosfet with gate protection 01-december-2008 rev. b page 2 of 5 n-channel electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. 2 max. unit test conditions static drain-source breakdown voltage v (br)dss 60 - - v gs = 0, i d = 10ua gate-threshold voltage v gs(th) 1.0 - 2.5 v v ds = v gs , i d = 250ua forward transconductance 2 g fs 100 - - ms v ds = 10v, i d = 200 ma - - 10 a v ds = 0, v gs = 20v - - 150 v ds = 0, v gs = 10v - - 1000 v ds =0,v gs =10v,t j =85 c gate-body leakage current i gss - - 100 v ds = 0, v gs = 5v - - 10 v ds = 50, v gs = 0 - - 100 na v ds = 50v, v gs =0, t j =85 c - - 1 v ds = 60v, v gs = 0 zero gate voltage drain current i dss - - 500 a v ds =60v, v gs =0, t j =125 c 800 - - v gs = 10v, v ds = 7.5v on-state drain current 2 i d(on) 500 - - ma v gs = 4.5v, v ds = 10v - - 2 v gs = 10v, i ds = 500ma drain-source on-resistance 2 r ds(on) - - 4 v gs = 4.5v, i ds = 200ma diode forward voltage v ds(on) - - 1.3 v i s = 200ma, v gs = 0 dynamic 2 total gate charge qg - 0.4 0.6 nc v ds =10v,v gs =4.5v,i d =250ma input capacitance ciss - 30 - output capacitance coss - 6 - reverse transfer capacitance crss - 2.5 - pf v ds =25v, v gs =0v, f=1mhz switching 2,3 turn-on time t (on) - - 25 turn-off time t (off) - - 35 ns v dd =30v,r l =150 ,i d = 200ma,v gen =10v,r g =10 notes: 1. t a = 25 c unless otherwise noted. 2. for design aid only, not subject to production testing. 3. pulse test: pw Q 300 s duty cycle Q 2% 4. switching time is essentially independent of operating temperature.
elektronische bauelemente 2N7002KG 190 ma, 60 v, r ds(on) = 2 n-ch small signal mosfet with gate protection 01-december-2008 rev. b page 3 of 5 characteristic curve
elektronische bauelemente 2N7002KG 190 ma, 60 v, r ds(on) = 2 n-ch small signal mosfet with gate protection 01-december-2008 rev. b page 4 of 5 characteristic curve (n-ch, cont?d)
elektronische bauelemente 2N7002KG 190 ma, 60 v, r ds(on) = 2 n-ch small signal mosfet with gate protection 01-december-2008 rev. b page 5 of 5 characteristic curve (n-ch, cont?d)
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